Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G16RC-062E IT:B | Dynamic random access memory | DEX lost 32ms for the automotive temperature

32ms for the automotive temperature range

AOD:4G0-035-080-H

MIL:MT53E256M32D2DS-046 AIT B

NXP:LPC1765FBD100K

Analog Devices Operational Amplifier Part #LTC6416IDDB#TRMPBF

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G16RC-062E IT:B | Dynamic random access memory | DEX lost 32ms for the automotive temperatureMicron Technology DRAM SDRAM DDR4, Part #: MT40A1G16RC 062E IT: B features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V, 125mV, +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O TC maximum up to 95C 64ms, 8192 cycle refresh up to 85C 32ms, 8192 cycle refresh at >85C to 95C 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe